CHARACTERISTICS OF NEW THYRISTORS

被引：8

作者：

NISHIZAWA, J ^{[1
]}

NAKAMURA, K ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

关键词：

D O I：

10.7567/JJAPS.16S1.541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：541 / 544

页数：4

共 12 条

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[8] PERFECT CRYSTAL-GROWTH OF SILICON BY VAPOR-DEPOSITION
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