LATTICE MISFIT AND ITS COMPENSATION IN SI-EPITAXIAL LAYER BY DOPING WITH GERMANIUM AND CARBON

被引：21

作者：

LEE, YT ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 04期

关键词：

D O I：

10.1149/1.2134254

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：530 / 535

页数：6

相关论文

共 24 条

[1] USE OF ANOMALOUS X-RAY TRANSMISSION FOR DETECTION OF DEFECTS PRODUCED IN SILICON AND GERMANIUM BY FAST NEUTRON IRRADIATION
BALDWIN, TO
THOMAS, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4391 - &
[2] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
BRAUNSTEIN, R
MOORE, AR
HERMAN, F
[J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710
[3] BRAUNSTEIN R, 1958, PHYS REV, V130, P879
[4] BRAUNSTEIN R, 1958, PHYS REV, V130, P871
[5] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON
COHEN, BG
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &
[6] FRUSSIN S, 1961, J APPL PHYS, V32, P1876
[7] JACOBIN RJ, 1964, APPL PHYS LETT, V4, P114
[8] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY
LANG, AR
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1748 - 1755
[9] COOPERATIVE DIFFUSION EFFECT
LAWRENCE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4106 - +
[10] THE DIFFUSIVITY OF CARBON IN SILICON
NEWMAN, RC
WAKEFIELD, J
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) : 230 - 234