PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS

被引：29

作者：

NISHIZAWA, J

KOKUBUN, Y

SHIMAWAKI, H

KOIKE, M

机构：

[1] SEMICOND RES INST,SENDAI 980,JAPAN

[2] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114257

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1939 / 1942

页数：4

相关论文

共 8 条

[1] ARIZUMI T, 1978, CURRENT TOPICS MATER, V1, P365
[2] EPITAXIAL GROWTH WITH LIGHT IRRADIATION
KUMAGAWA, M
SUNAMI, H
TERASAKI, T
NISHIZAWA, JI
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) : 1332 - +
[3] VAPOR-PHASE EQUILIBRIA IN SYSTEMS IN-INCL3 AND GA-GACL3
KUNIYA, Y
HOSAKA, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) : 385 - 391
[4] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417
[5] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON
NISHIZAWA, J
NIHIRA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 82 - 89
[6] NISHIZAWA J, 1961, J METALL SOC JPN, V25, P177
[7] NISHIZAWA J, 1961, J METALL SOC JPN, V25, P149
[8] ANOMALOUS VAPOR TRANSPORT REACTION OF GAAS WITH ASCL3 IN H2 GAS-FLOW SYSTEM
WATANABE, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) : 1451 - 1458