RECENT PROGRESS IN ATOMIC LAYER EPITAXY OF III-V COMPOUNDS

被引：27

作者：

BEDAIR, SM

MCDERMOTT, BT

IDE, Y

KARAM, NH

HASHEMI, H

TISCHLER, MA

TIMMONS, M

TARN, JCL

ELMASRY, N

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

[3] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

We wish to thank the Air Force Office of Scientific Research and the National Science Foundation for funding;

D O I：

10.1016/0022-0248(88)90525-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：182 / 189

页数：8

共 24 条

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