LASER-INDUCED DECOMPOSITION OF TRIETHYLGALLIUM AND TRIMETHYLGALLIUM ADSORBED ON GAAS(100)

被引：73

作者：

MCCAULLEY, JA ^{[1
]}

MCCRARY, VR ^{[1
]}

DONNELLY, VM ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1021/j100340a026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1148 / 1158

页数：11

共 65 条

[1] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES
AMITH, A
KUDMAN, I
STEIGMEIER, EF
[J]. PHYSICAL REVIEW, 1965, 138 (4A): : 1270 - +
[2] Baeri P., 1982, Laser annealing of semiconductors, P75
[3] ULTRAVIOLET INDUCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
BALK, P
HEINECKE, H
PUTZ, N
PLASS, C
LUTH, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 711 - 715
[4] ULTRAVIOLET-ASSISTED GROWTH OF GAAS
BALK, P
FISCHER, M
GRUNDMANN, D
LUCKERATH, R
LUTH, H
RICHTER, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1453 - 1459
[5] EMPIRICAL-METHODS FOR DETERMINATION OF IONIZATION GAUGE RELATIVE SENSITIVITIES FOR DIFFERENT GASES
BARTMESS, JE
GEORGIADIS, RM
[J]. VACUUM, 1983, 33 (03) : 149 - 153
[6] LASER SURFACE-ADSORBATE INTERACTIONS - THERMAL VERSUS PHOTOELECTRONIC EXCITATION OF MO(CO)6 ON SI(111)
BARTOSCH, CE
GLUCK, NS
HO, W
YING, Z
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (12) : 1425 - 1428
[7] BERTNESS KA, 1987, PHOTON BEAM PLASMA S, V75, P575
[8] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[9] UV PHOTODISSOCIATION AND PHOTODESORPTION OF ADSORBED MOLECULES .1. CH3BR ON LIF(001)
BOURDON, EBD
COWIN, JP
HARRISON, I
POLANYI, JC
SEGNER, J
STANNERS, CD
YOUNG, PA
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (25) : 6100 - 6103
[10] CARDONA M, 1960, 1960 INT C SEM PHYS, P388