GROWTH KINETIC-STUDY IN GAAS MOLECULAR LAYER EPITAXY IN TMG/ASH3 SYSTEM

被引：73

作者：

NISHIZAWA, J ^{[1
]}

KURABAYASHI, T ^{[1
]}

机构：

[1] SEMICOND RES INST,SENDAI 980,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

This reaction was supported by the AES result of the deposited film. From these experiments of the photoexcitation in the vapor phase; we obtained the wavelength dependence as shown in table 1;

D O I：

10.1016/0022-0248(88)90513-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：98 / 107

页数：10

共 24 条

[1] EPITAXIAL GROWTH WITH LIGHT IRRADIATION
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TERASAKI, T
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[2] PROPERTIES OF SN-DOPED GAAS
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[3] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES
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KURABAYASHI, T
ABE, H
SAKURAI, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1572 - 1577
[4] REACTION-MECHANISM OF GAAS VAPOR-PHASE EPITAXY
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2567 - 2575
[5] PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
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[6] PHOTON ENHANCEMENT OF DECOMPOSITION OF ASH3 AND TMG
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KURABAYASHI, T
HOSHINA, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) : 502 - 504
[7] DEPOSITION MECHANISM OF GAAS EPITAXY
NISHIZAWA, J
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ABE, H
SAKURAI, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 945 - 951
[8] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE
NISHIZAWA, J
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TADANO, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 215 - 222
[9] MOLECULAR LAYER EPITAXY
NISHIZAWA, J
ABE, H
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
[10] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417

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