NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE

被引：92

作者：

NISHIZAWA, J ^{[1
]}

OKUNO, Y ^{[1
]}

TADANO, H ^{[1
]}

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90134-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：215 / 222

页数：8

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[9] ANNEALING OF N-TYPE GAAS UNDER EXCESS ARSENIC VAPOR [J].

OTSUKA, H ;

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