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POLYIMIDE-RELATED DESIGN CONSIDERATIONS IN A BIPOLAR TECHNOLOGY

被引：9
作者：
HOOK, TB
机构：
[1] General Technology Division, IBM Corporation, Essex Junction
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 07期
关键词：
D O I：
10.1109/16.55759
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is found that a spurious leakage path from the emitter to the collector of a lateral p-n-p or a trench-defined n-p-n device may be induced by the applied collector voltage. This voltage influences the surface potential at the emitter-base junction through the charging of the polyimide used as interlevel dielectric and trench fill, respectively. A simple model of the effect is developed, and several successful process features are discussed. © 1990 IEEE
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页码：1714 / 1718
页数：5
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