EXCITONIC PROCESSES IN HIGHLY EXCITED ZNSE EPILAYERS

被引：6

作者：

PRESSER, N ^{[1
]}

KUDLEK, G ^{[1
]}

GUTOWSKI, J ^{[1
]}

机构：

[1] UNIV BREMEN,INST EXPTL PHYS,W-2800 BREMEN 33,GERMANY

来源：

JOURNAL OF LUMINESCENCE | 1992年 / 53卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(92)90192-C

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Generally, luminescence spectra of ZnSe layers grown by molecular-beam epitaxy (MBE) show strong high-density P bands. Supported by excitation measurements, we assigned these P bands to exciton-exciton collision processes. Actually, the situation changes drastically for free-standing ZnSe layers obtained after removal of their GaAs substrates. For I(exc) greater-than-or-equal-to 150 kW/cm2, a strong band appears at 2.7835 eV, here called N band. For increasing I(exc), it shifts stronger towards longer wavelengths than the P bands, which vanish at highest excitation densities. We discuss the N band in terms of electron-hole plasma (EHP) formation in differently treated ZnSe epilayers, taking into account results from photoluminescence, excitation, reflection and gain spectroscopy.

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页码：435 / 438

页数：4

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