LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES

被引：8

作者：

BOLKHOVITYANOV, YB

ALPEROVICH, VL

JAROSHEVICH, AS

NOMEROTSKY, NV

PAULISH, AG

TEREKHOV, AS

TRUKHANOV, EM

机构：

[1] Institute of Semiconductor Physics, 630090 Novosibirsk 90

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00543-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAsP/GaAs(111)B pseudomorphic layers have been grown with elastic strains up to 1% and bandgaps ranging from 1.4 to 1.8 eV by liquid phase epitaxy (LPE) for the first time. Splitting of the valence band up to 50 meV was observed in these films. Photoemitters with the negative electron affinity state have been prepared by Cs-O activation of the strained InGaAsP films in ultrahigh vacuum (UHV).

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收藏

页码：310 / 313

页数：4

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