ABSORPTION-COEFFICIENT AND DERIVATIVE TRANSMISSION MEASUREMENT IN GA1-XALXAS EPITAXIAL LAYERS

被引:6
作者
MADELON, R
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 10期
关键词
D O I
10.1051/rphysap:019790014010086300
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:863 / 867
页数:5
相关论文
共 16 条
[1]  
BEROLO O, 1969, CAN J PHYS, V40, P4910
[2]  
BUMELIS AI, 1976, SOV PHYS SEMICOND, V9, P1081
[3]   COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].
CASEY, HC ;
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&
[4]   REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].
CASEY, HC ;
SELL, DD ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65
[5]  
HAGA E, 1964, J PHYS SOC JAPAN, V19
[6]  
HESS E, 1973, PHYS STATUS SOLIDI, V55, pA87
[7]  
HILSUN C, 1966, SEMICOND SEMIMETAL, P3
[8]   WAVELENGTH MODULATION SPECTROSCOPY OF GA1-XALXAS [J].
LANDE, R ;
MADELON, R ;
HAIRIE, A ;
FORTINI, A .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (03) :483-485
[9]   OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].
LOGAN, RA ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176
[10]   SOME OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOY SYSTEM [J].
MONEMAR, B ;
SHIH, KK ;
PETTIT, GD .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2604-2613