SOME OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOY SYSTEM

被引：202

作者：

MONEMAR, B ^{[1
]}

SHIH, KK ^{[1
]}

PETTIT, GD ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.322979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2604 / 2613

页数：10

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共 75 条

[1] ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V6, P1620
[2] BACHRACH RZ, 1972, J APPL PHYS, V42, P5102
[3] DIRECT EXCITON SPECTRUM IN DIAMOND AND ZINC-BLENDE SEMICONDUCTORS
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (06) : 373 - &
[4] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE
BALSLEV, I
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &
[5] Bebb H B., 1972, SEMICOND SEMIMET, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5
[6] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS
BEROLO, O
WOOLLEY, JC
VANVECHT.JA
[J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3794 - 3798
[7] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS
BEROLO, O
WOOLLEY, JC
[J]. CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) : 1335 - &
[8] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON
BLUDAU, W
ONTON, A
HEINKE, W
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848
[9] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
BLUM, JM
SHIH, KK
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1394 - &
[10] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &

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