LOW-FREQUENCY INTENSITY NOISE RESONANCE IN AN EXTERNAL CAVITY GAAS-LASER FOR POSSIBLE LASER CHARACTERIZATION

被引：14

作者：

TATAH, K

GARMIRE, E

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 08期

关键词：

D O I：

10.1109/3.34038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1800 / 1807

页数：8

相关论文

共 38 条

[1] Akul'shin A. M., 1986, Soviet Journal of Quantum Electronics, V16, P912, DOI 10.1070/QE1986v016n07ABEH007196
[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[3] CASEY HC, 1978, HETEROSTRUCTURE LA B, P270
[4] EVANS G, 1987, LASER SATELLITE COMM, P68
[5] LOW-FREQUENCY INTENSITY FLUCTUATION IN LASER-DIODES WITH EXTERNAL OPTICAL FEEDBACK
FUJIWARA, M
KUBOTA, K
LANG, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 217 - 220
[6] GAIN MEASUREMENTS ON SEMICONDUCTOR-LASERS BY OPTICAL FEEDBACK FROM AN EXTERNAL GRATING CAVITY
GADE, N
OSMUNDSEN, JH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1238 - 1242
[7] INSTABILITY OF SEMICONDUCTOR-LASERS DUE TO OPTICAL FEEDBACK FROM DISTANT REFLECTORS
HENRY, CH
KAZARINOV, RF
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (02) : 294 - 301
[8] NOISE PROPERTIES OF INJECTION-LASERS DUE TO REFLECTED WAVES
HIROTA, O
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 142 - 149
[9] THRESHOLD BEHAVIOR OF (GAAL)AS-GAAS LASERS AT LOW-TEMPERATURES
HWANG, CJ
PATEL, NB
SACILOTTI, MA
PRINCE, FC
BULL, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 29 - 34
[10] OBSERVATION OF GAIN COMPRESSION IN A GAALAS DIODE-LASER THROUGH A PICOSECOND TRANSMISSION MEASUREMENT
JOHNSON, BC
MOORADIAN, A
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1135 - 1137

← 1 2 3 4 →