FREQUENCY-DOMAIN STUDIES OF INTERSUBBAND OPTICAL-TRANSITIONS IN SI INVERSION LAYERS

被引：36

作者：

MCCOMBE, BD

HOLM, RT

SCHAFER, DE

机构：

[1] Naval Research Laboratory, Washington

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1098(79)90710-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Fourier Transform Spectroscopic studies of inter-electric-field subband transitions in Silicon inversion layers are compared with optical properties calculated with a 5 media model and a classical dielectric function representation of the inversion layer. Qualitative discrepancies in relative intensities of the subband transitions are interpreted in terms of many-body effects. © 1979.

引用

页码：603 / 608

页数：6

共 13 条

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[2] INTER-SUBBAND OPTICAL-TRANSITIONS IN A SURFACE SPACE-CHARGE LAYER
ANDO, T
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (01) : 133 - 136
[3] ELECTRON-ELECTRON INTERACTION AND ELECTRONIC PROPERTIES OF SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES
ANDO, T
[J]. SURFACE SCIENCE, 1978, 73 (01) : 1 - 18
[4] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES
ANDO, T
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272
[5] INTERFACE EM MODES OF A SURFACE QUANTIZED PLASMA-LAYER ON A SEMICONDUCTOR SURFACE
CHEN, WP
CHEN, YJ
BURSTEIN, E
[J]. SURFACE SCIENCE, 1976, 58 (01) : 263 - 265
[6] GORNIK E, 1976, PHYS REV LETT, V37, P1475
[7] PHOTOCONDUCTIVITY MEASUREMENTS RELATED TO INTER-SUB-BAND TRANSITIONS IN SILICON MOSFET STRUCTURES
HU, CC
PEARSE, J
CHAM, KM
WHEELER, RG
[J]. SURFACE SCIENCE, 1978, 73 (01) : 207 - 216
[8] KNESCHEUREK P, 1977, PHYSICAL REV B, V15, P1590
[9] MCCOMBE BD, UNPUBLISHED
[10] MCCOMBE BD, 1979, 13TH P INT C PHYS SE, V43, P1227

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