HIGH-SPEED (10-20 NS) NONVOLATILE MRAM WITH FOLDED STORAGE ELEMENTS

被引：7

作者：

RANMUTHU, KTM ^{[1
]}

RANMUTHU, IW ^{[1
]}

POHM, AV ^{[1
]}

COMSTOCK, CS ^{[1
]}

HASSOUN, M ^{[1
]}

机构：

[1] NONVOLATILE ELECTR INC,PLYMOUTH,MN 55441

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1992年 / 28卷 / 05期

关键词：

D O I：

10.1109/20.179491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In magneto-resistive random access memories (MRAMs), the read access time is a function of cell size (aspect ratio). Thus it is possible to design MRAMs for a wide range of access times. A prototype MRAM chip has been designed using 250-OMEGA folded memory cells, two-turn word lines and a high speed differential sensing scheme. Simulation results indicate the total delay through the analog circuitry to be limited to 9.8 ns thus demonstrating the MRAM access time to be within the range 10-20 ns.

引用

页码：2359 / 2361

页数：3