10-35 NANOSECOND MAGNETO-RESISTIVE MEMORIES

Magneto-resistive memory elements are being used to build non-volatile, random access, read-write memories which possess radiation hardness. In a typical M-R memory element, the modest output signal requires higher • access. times in order to maintain an adequate SNR, thus limiting the speed attainable. This limitation can be overcome by increasing the memory element size and using a reverse read word current together with suitable sense techniques. Large M-R memory cells with a sense resistance of about 470 a have been synthesized by stringing eight 1.8 x 12um M-R elements together. These were tested in a bridge formation to obtain signal levels as large as -11 mv and + 7 mv, with an approximate settling time of 35 ns in a discrete circuit. © 1990 IEEE