ANALYSIS OF M-R ELEMENTS FOR 108 BIT/CM2 ARRAYS

被引:8
作者
POHM, AV [1 ]
COMSTOCK, CS [1 ]
DAUGHTON, JM [1 ]
机构
[1] HONEYWELL CSSL,PLYMOUTH,MN 55441
关键词
D O I
10.1109/20.42590
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4266 / 4268
页数:3
相关论文
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[3]   0.075-MU-M, 1.25-MU-M AND 2.0-MU-M WIDE M-R TRANSDUCERS [J].
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[4]   THE DESIGN OF A ONE MEGABIT NON-VOLATILE M-R MEMORY CHIP USING 1.5 X 5-MU-M CELLS [J].
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MEHRA, V .
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