THE BEHAVIOR AND PROPERTIES OF IN-SITU-FORMED YBA2CU3OX THIN-FILMS DURING REVERSIBLE OXIDATION DEOXIDATION

被引:4
作者
MORRIS, GW [1 ]
TOMLINSON, EJ [1 ]
SOMEKH, RE [1 ]
BARBER, ZH [1 ]
WILLIAMS, EJ [1 ]
RAY, MP [1 ]
EVETTS, JE [1 ]
机构
[1] UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE,ENGLAND
关键词
D O I
10.1109/20.133453
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The oxygen atomicity of the high critical temperature superconductor YBa2Cu3O(x) can be controlled by low temperature anneals in oxygen or argon1,2,3. We have investigated the behaviour of thin films of YBa2Cu3O(x) with reduced oxygen content by carrying out such anneals and examining the structure and electronic properties of the material at intervals. The shape of the transition for slightly deoxygenated material and the effects of deoxygenation on critical current density in magnetic fields from 0 to 3T are reported and discussed. Several groups4,5 have reported differences between YBa2Cu3O(x) thin film and bulk specimens in the relationship of the c-axis lattice parameter, c, to critical temperature, T(c). We confirm that in-situ-formed 6 films which have low T(c) as-deposited have anomalously high c values, but demonstrate that "good" films (that is films which as-deposited have c approximately 1.168nm and T(c) approximately 90K) follow the bulk c vs Tc relationship when deoxygenated and reoxygenated in low temperature anneals. Possible causes of this behaviour are discussed.
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页码:1430 / 1433
页数:4
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