ELECTRIC-FIELD EFFECTS ON EXCITON LIFETIMES IN SYMMETRICAL COUPLED GAAS-AL0.3GA0.7AS DOUBLE QUANTUM-WELLS

被引：90

作者：

ALEXANDROU, A ^{[1
]}

KASH, JA ^{[1
]}

MENDEZ, EE ^{[1
]}

ZACHAU, M ^{[1
]}

HONG, JM ^{[1
]}

FUKUZAWA, T ^{[1
]}

HASE, Y ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TOKYO RES LAB,TOKYO 102,JAPAN

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.42.9225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the effects of coupling on the lifetime of spatially indirect excitons in (50- GaAs)/Al0.3Ga0.7As symmetric double quantum wells. The coupling was controlled by varying the barrier thickness between 25 and 60 and by application of an electric field. Lifetime enhancements of up to 3 orders of magnitude relative to the lifetimes of spatially direct excitons were observed. At a given electric field the lifetime enhancement was larger the wider the barrier, due to the smaller electron-hole wave-function overlap, in good agreement with theory. We have also observed nonresonant hole tunneling and estiimated the tunneling time, which was of the order of 300 ps in a 40 - barrier sample. © 1990 The American Physical Society.

引用

页码：9225 / 9228

页数：4

共 22 条

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