LONG-LIVED SPATIALLY INDIRECT EXCITONS IN COUPLED GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：87

作者：

GOLUB, JE

KASH, K

HARBISON, JP

FLOREZ, LT

机构：

[1] Bellcore, Red Bank, NJ 07701-7040

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.41.8564

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present nanosecond time-resolved measurements of the low-temperature photoluminescence in coupled GaAs/AlxGa1-xAs quantum wells. Working with 10.0-nm and 15.0-nm GaAs quantum wells coupled through a 3.0-nm Al0.3Ga0.7As barrier layer, we observe spatially indirect excitons with lifetimes in excess of 200 nsecan enhancement of more than 2 orders of magnitude over the lifetime of the spatially direct exciton. As a result, extremely cold GaAs exciton gases become possible, a prerequisite for testing recent predictions of quantum-statistical behavior in this system. © 1990 The American Physical Society.

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页码：8564 / 8567

页数：4

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