INFLUENCE OF COUPLING OF WELLS ON SPONTANEOUS EMISSION-LINE SHAPE IN GAAS/GAALAS MULTIPLE QUANTUM WELLS

被引：14

作者：

KRAHL, M ^{[1
]}

CHRISTEN, J ^{[1
]}

BIMBERG, D ^{[1
]}

WEIMANN, G ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST FERNMELDETECHN ZENTRALAMT,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：798 / 800

页数：3

共 15 条

[1]

Bauer R., 1987, 18th International Conference on the Physics of Semiconductors, P525

[2] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J].

BIMBERG, D ;

MARS, D ;

MILLER, JN ;

BAUER, R ;

OERTEL, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1014-1021

[3]

BIMBERG D, 1987, J VACUUM SCI TECHN B, V5, P1199

[4]

BIMBERG D, 1984, SPRINGER SERIES SOLI, V53, P136

[5]

BOTTCHER EH, 1987, APPL PHYS LETT, V50, P1074, DOI 10.1063/1.97974

[6] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].

CHEMLA, DS ;

MILLER, DAB ;

SMITH, PW ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275

[7]

DINGLE R, 1976, Patent No. 3982207

[8] VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE [J].

HERSEE, SD ;

BALDY, M ;

ASSENAT, P ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1982, 18 (20) :870-871

[9] THEORY OF PHOTOLUMINESCENCE LINE-SHAPE DUE TO INTERFACIAL QUALITY IN QUANTUM WELL STRUCTURES [J].

SINGH, J ;

BAJAJ, KK ;

CHAUDHURI, S .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :805-807

[10] ROLE OF INTERFACE ROUGHNESS AND ALLOY DISORDER IN PHOTOLUMINESCENCE IN QUANTUM-WELL STRUCTURES [J].

SINGH, J ;

BAJAJ, KK .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5433-5437

← 1 2 →