ROLE OF INTERFACE ROUGHNESS AND ALLOY DISORDER IN PHOTOLUMINESCENCE IN QUANTUM-WELL STRUCTURES

被引：197

作者：

SINGH, J ^{[1
]}

BAJAJ, KK ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

关键词：

D O I：

10.1063/1.334818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5433 / 5437

页数：5

共 16 条

[1] GROWTH AND PHOTO-LUMINESCENCE SPECTRA OF HIGH-PURITY LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS
BHATTACHARYA, PK
RAO, MV
TSAI, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5096 - 5102
[2] BONFILS JF, 1981, P INT C METAL ORGANI
[3] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[4] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES
GOLDSTEIN, L
HORIKOSHI, Y
TARUCHA, S
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492
[5] ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES
GREENE, RL
BAJAJ, KK
PHELPS, DE
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1807 - 1812
[6] ENERGY SPECTRUM OF DISORDERED SYSTEMS
LIFSHITZ, IM
[J]. ADVANCES IN PHYSICS, 1964, 13 (52) : 483 - &
[7] MORKOC H, 1983, 4TH P MOL BEAM EP WO
[8] NORRIS PR, COMMUNICATION
[9] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
HIRTZ, JP
ZIEMELIS, UO
DELALANDE, C
ETIENNE, B
VOOS, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587
[10] SHARP-LINE PHOTOLUMINESCENCE SPECTRA FROM GAAS-GAALAS MULTIPLE-QUANTUM-WELL STRUCTURES
REYNOLDS, DC
BAJAJ, KK
LITTON, CW
YU, PW
MASSELINK, WT
FISCHER, R
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7038 - 7041