CHEMICAL INTERACTION OF THIN CR FILMS WITH THE MOS2(0001) SURFACE STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND SCANNING AUGER MICROSCOPY

被引：17

作者：

DURBIN, TD

LINCE, JR

YARMOFF, JA

机构：

[1] AEROSPACE CORP,CTR MECH & MAT TECHNOL,EL SEGUNDO,CA 90245

[2] UNIV CALIF RIVERSIDE,DEPT PHYS,RIVERSIDE,CA 92521

[3] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.578093

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of chromium films on the MoS2(0001) surface has been studied with core-level x-ray photoelectron spectroscopy and scanning Auger microscopy. The films grown on room temperature surfaces result in a limited chemical reaction to produce metallic Mo and chromium sulfide(s). The surfaces of the films are relatively S-rich, while the bulk of the films contains smaller amounts of S. Mo is found only at the film/MoS2 interface and is not incorporated into the bulk of the overlayer. Annealing the Cr covered sample to 650-degrees-C and higher further drives the reaction between Cr and MoS2, and causes partial coalescence of the

引用

页码：2529 / 2534

页数：6

共 16 条

[1] ANISOTROPY OF ELECTRONIC EXCITATIONS IN MOS2 BY LOW-ENERGY ELECTRON ANGLE-RESOLVED LOSS SPECTROSCOPY [J].