SCHOTTKY-BARRIER FORMATION ON A COVALENT SEMICONDUCTOR WITHOUT FERMI-LEVEL PINNING - THE METAL-MOS2(0001) INTERFACE

被引：109

作者：

LINCE, JR

CARRE, DJ

FLEISCHAUER, PD

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.36.1647

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1647 / 1656

页数：10

共 43 条

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