DESIGN CRITERIA FOR GUNN,CW OSCILLATORS WITH GOOD FREQUENCY-TEMPERATURE STABILITY

被引：1

作者：

DESA, BAE ^{[1
]}

HOBSON, GS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3J,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(73)90081-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1261 / 1266

页数：6

共 8 条

[1] BIRD J, 1971, ELECTRON LETT, V7, P300
[2] FREQUENCY/TEMPERATURE CHARACTERISTICS OF GUNN DEVICES
DAVIES, R
GURNEY, WSC
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1972, 8 (14) : 349 - &
[3] FREEMAN KR, TO BE PUBLISHED
[4] FREEMAN KR, 1972, IEEE T ELECTRON DEVI, VED19, P62
[5] FREQUENCY-TEMPERATURE RELATIONSHIPS OF X-BAND GUNN OSCILLATORS
HOBSON, GS
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 431 - +
[6] HOBSON GS, 1972, J PHYS D, V12, P2266
[7] HOBSON GS, 1967, IEEE T ELECTRON DEV, VED14, P526
[8] ELECTRON-RELAXATION EFFECTS IN TRANSFERRED-ELECTRON DEVICES REVEALED BY NEW SIMULATION METHOD
JONES, D
REES, HD
[J]. ELECTRONICS LETTERS, 1972, 8 (14) : 363 - &