SPONTANEOUS FLUCTUATIONS IN LEAKAGE CURRENT DUE TO CHARGE GENERATION AND RECOMBINATION IN SEMICONDUCTOR DIODES

被引：19

作者：

SCOTT, L

STRUTT, MJO

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(66)90130-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1067 / &

共 11 条

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[2] CHENETTE ER, 1962, IRE T ELECTRON DEV, VED9, P123
[3] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS
GOULDING, FS
HANSEN, WL
[J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 249 - 262
[4] GUGGENBUHL W, 1955, THESIS ZURICH
[5] RIFAAT CA, TO BE PUBLISHED
[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[7] SCHNEIDER B, 1959, P I RADIO ENGRS, V47, P1245
[8] SCOTT L, 1966, ELECTRON LETT, V2, P110
[9] SCOTT L, 1966, THESIS ZURICH
[10] STRUTT MJO, 1962 NOT MCKAY LECT