THE TRANSIENT INTEGRAL CHARGE CONTROL RELATION - A NOVEL FORMULATION OF THE CURRENTS IN A BIPOLAR-TRANSISTOR

被引：37

作者：

KLOSE, H ^{[1
]}

WIEDER, AW ^{[1
]}

机构：

[1] SIEMENS AG,CENT RES & DEV,D-8000 MUNICH 83,FED REP GER

来源：

关键词：

D O I：

10.1109/T-ED.1987.23050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1090 / 1099

页数：10

共 12 条

[1] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS
BACCARANI, G
JACOBONI, C
MAZZONE, AM
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10
[2] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON
BACCARANI, G
WORDEMAN, MR
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 407 - 416
[3] DEGRAAF HC, 1977, P STUDY I PROCESS DE, P377
[4] Engl W. L., 1977, Proceedings of the NATO Advanced Study Institute on Process and Device Modelling for Integrated Circuit Design, P377
[5] ENGL WL, 1983, MEDUSA USER MANUAL
[6] A CHARGE CONTROL RELATION FOR BIPOLAR TRANSISTORS
GUMMEL, HK
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (01): : 115 - +
[7] AN INTEGRAL CHARGE CONTROL MODEL OF BIPOLAR TRANSISTORS
GUMMEL, HK
POON, HC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (05): : 827 - +
[8] THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS
VANROOSBROECK, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 560 - 607
[9] EMITTER EFFECTS IN SHALLOW BIPOLAR-DEVICES - MEASUREMENTS AND CONSEQUENCES
WIEDER, AW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1402 - 1408
[10] WINKEL JT, 1973, IEEE T ELECTRON DEV, VED20, P389, DOI 10.1109/T-ED.1973.17660