A 0.25-MU-M GATE-LENGTH PSEUDOMORPHIC HFET WITH 32-MW OUTPUT POWER AT 94-GHZ

被引：17

作者：

SMITH, PM

LESTER, LF

CHAO, PC

HO, P

SMITH, RP

BALLINGALL, JM

KAO, MY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 439

页数：3

共 10 条

[1]

CHAO PC, 1986 IEDM TECH DIG, P410

[2]

CHAO PC, 1983 IEDM TECH DIG, P613

[3]

DANIELS RR, 1987 IEDM TECH DIG, P921

[4]

HENDERSON T, 1986 IEDM TECH DIG, P464

[5]

KIM B, 1988 IEDM TECH DIG, P168

[6]

MISHRA UK, 1988 IEDM TECH DIG, P180

[7] A DOUBLE-HETEROJUNCTION DOPED-CHANNEL PSEUDOMORPHIC POWER HEMT WITH A POWER-DENSITY OF 0.85 W/MM AT 55 GHZ [J].

SAUNIER, P ;

MATYI, RJ ;

BRADSHAW, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :397-398

[8] 94-GHZ TRANSISTOR AMPLIFICATION USING AN HEMT [J].

SMITH, PM ;

CHAO, PC ;

DUH, KHG ;

LESTER, LF ;

LEE, BR .

ELECTRONICS LETTERS, 1986, 22 (15) :780-781

[9]

SMITH PM, 1987 IEDM TECH DIG, P854

[10]

SMITH PM, 1988 MTTS DIG, P927

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