94-GHZ TRANSISTOR AMPLIFICATION USING AN HEMT

被引:16
作者
SMITH, PM
CHAO, PC
DUH, KHG
LESTER, LF
LEE, BR
机构
[1] GE, Syracuse, NY, USA, GE, Syracuse, NY, USA
关键词
TRANSISTORS; FIELD EFFECT - Microwaves;
D O I
10.1049/el:19860535
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transistor amplification at 94 GHz has been demonstrated. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3. 6 db and an output power of 3. 4 mw with 2 db gain.
引用
收藏
页码:780 / 781
页数:2
相关论文
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