MILLIMETER-WAVE GAAS-FETS PREPARED BY MBE

被引：21

作者：

KIM, B

TSERNG, HQ

SHIH, HD

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 01期

关键词：

D O I：

10.1109/EDL.1985.26021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 2

页数：2

共 9 条

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[2] QUARTER MICRON LOW-NOISE GAAS-FETS [J].

CHYE, PW ;

HUANG, C .

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[3] IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION [J].

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BROCKERHOFF, W ;

HEIME, K ;

CAPPY, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1032-1037

[4]

DRANGEID KE, 1970, IBM J RES DEV, P82

[5]

FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[6] GROWTH OF MILLIMETER-WAVE GAAS IMPATT STRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

SHIH, HD ;

BAYRAKTAROGLU, B ;

DUNCAN, WM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :199-201

[7]

SHIH HD, UNPUB J VAC SCI TECH

[8] HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR [J].

TSERNG, HQ ;

KIM, B .

ELECTRONICS LETTERS, 1984, 20 (07) :297-298

[9]

Watkins E. T., 1983, 1983 IEEE MTT-S International Microwave Symposium Digest, P145

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