HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR

被引:8
作者
TSERNG, HQ
KIM, B
机构
关键词
D O I
10.1049/el:19840203
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:297 / 298
页数:2
相关论文
共 4 条
[1]  
SCHELLENBERG JM, 1981 IEEE INT MICR S, P328
[2]   PERFORMANCE OF GAAS MESFET OSCILLATORS IN FREQUENCY-RANGE 8-25 GHZ [J].
TSERNG, HQ ;
MACKSEY, HM ;
SOKOLOV, V .
ELECTRONICS LETTERS, 1977, 13 (03) :85-86
[3]  
TSERNG HQ, 1981, IEEE T ELECTRON DEV, V28, P163, DOI 10.1109/T-ED.1981.20304
[4]   NEW INTEGRATED WAVEGUIDE-MICROSTRIP TRANSITION [J].
VANHEUVEN, JHC .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (03) :144-147