SUB-MICRON GAAS MICROWAVE FETS WITH LOW PARASITIC GATE AND SOURCE RESISTANCES

被引：17

作者：

BANDY, SG

CHAI, YG

CHOW, R

NISHIMOTO, CK

ZDASIUK, G

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 02期

关键词：

D O I：

10.1109/EDL.1983.25640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：42 / 44

页数：3

共 10 条

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