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DOUBLE-LAYER RESIST FILMS FOR SUBMICROMETER ELECTRON-BEAM LITHOGRAPHY
被引:35
作者
:
TODOKORO, Y
论文数:
0
引用数:
0
h-index:
0
TODOKORO, Y
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1980.20054
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1443 / 1448
页数:6
相关论文
共 18 条
[1]
1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
AITKEN, JM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 372
-
379
[2]
1 MU-M MOSFET VLSI TECHNOLOGY .3. LOGIC-CIRCUIT DESIGN METHODOLOGY AND APPLICATIONS
COOK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
COOK, PW
SCHUSTER, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
SCHUSTER, SE
PARRISH, JT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
PARRISH, JT
DILONARDO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
DILONARDO, V
FREEDMAN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
FREEDMAN, DR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 333
-
346
[3]
1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CROWDER, BL
ZIRINSKY, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
ZIRINSKY, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 369
-
371
[4]
1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
GAENSSLEN, FH
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
WALKER, EJ
COOK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
COOK, PW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 325
-
333
[5]
MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
NEUREUTHER, AR
TUTTLE, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
TUTTLE, JA
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
WALKER, EJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
: 456
-
464
[6]
GREENEICH JS, 1975, J ELECTROCHEM SOC, V122
[7]
ELECTRON-BEAM FABRICATED GAAS FET INVERTER
GREILING, PT
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
GREILING, PT
KRUMM, CF
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
KRUMM, CF
OZDEMIR, FS
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
OZDEMIR, FS
HACKETT, LH
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
HACKETT, LH
LOHR, RF
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
LOHR, RF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(11)
: 1340
-
1340
[8]
1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
GROBMAN, WD
LUHN, HE
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
LUHN, HE
DONOHUE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
DONOHUE, TP
SPETH, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
SPETH, AJ
WILSON, A
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
WILSON, A
HATZAKIS, M
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
HATZAKIS, M
CHANG, THP
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
CHANG, THP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 360
-
368
[9]
HIBINO K, 1979, 10TH P RIK S, P175
[10]
1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY
HUNTER, WR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HUNTER, WR
EPHRATH, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
EPHRATH, L
GROBMAN, WD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
GROBMAN, WD
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
OSBURN, CM
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CROWDER, BL
CRAMER, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CRAMER, A
LUHN, HE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
LUHN, HE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 353
-
359
←
1
2
→
共 18 条
[1]
1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
AITKEN, JM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 372
-
379
[2]
1 MU-M MOSFET VLSI TECHNOLOGY .3. LOGIC-CIRCUIT DESIGN METHODOLOGY AND APPLICATIONS
COOK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
COOK, PW
SCHUSTER, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
SCHUSTER, SE
PARRISH, JT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
PARRISH, JT
DILONARDO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
DILONARDO, V
FREEDMAN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
FREEDMAN, DR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 333
-
346
[3]
1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CROWDER, BL
ZIRINSKY, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
ZIRINSKY, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 369
-
371
[4]
1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
GAENSSLEN, FH
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
WALKER, EJ
COOK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
COOK, PW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 325
-
333
[5]
MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
NEUREUTHER, AR
TUTTLE, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
TUTTLE, JA
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
WALKER, EJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
: 456
-
464
[6]
GREENEICH JS, 1975, J ELECTROCHEM SOC, V122
[7]
ELECTRON-BEAM FABRICATED GAAS FET INVERTER
GREILING, PT
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
GREILING, PT
KRUMM, CF
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
KRUMM, CF
OZDEMIR, FS
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
OZDEMIR, FS
HACKETT, LH
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
HACKETT, LH
LOHR, RF
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
LOHR, RF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(11)
: 1340
-
1340
[8]
1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
GROBMAN, WD
LUHN, HE
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
LUHN, HE
DONOHUE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
DONOHUE, TP
SPETH, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
SPETH, AJ
WILSON, A
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
WILSON, A
HATZAKIS, M
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
HATZAKIS, M
CHANG, THP
论文数:
0
引用数:
0
h-index:
0
机构:
The IBM Thomas J. Watson Research Center, Yorktown Heights
CHANG, THP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 360
-
368
[9]
HIBINO K, 1979, 10TH P RIK S, P175
[10]
1 MU-M MOSFET VLSI TECHNOLOGY .5. SINGLE-LEVEL POLYSILICON TECHNOLOGY USING ELECTRON-BEAM LITHOGRAPHY
HUNTER, WR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HUNTER, WR
EPHRATH, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
EPHRATH, L
GROBMAN, WD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
GROBMAN, WD
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
OSBURN, CM
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CROWDER, BL
CRAMER, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
CRAMER, A
LUHN, HE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
LUHN, HE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 353
-
359
←
1
2
→