1 MU-M MOSFET VLSI TECHNOLOGY .3. LOGIC-CIRCUIT DESIGN METHODOLOGY AND APPLICATIONS

被引:12
作者
COOK, PW
SCHUSTER, SE
PARRISH, JT
DILONARDO, V
FREEDMAN, DR
机构
[1] IBM Thomas J. Watson Research Center, NY 10598, Yorktown Heights
[2] IBM Systems Communications Division, Kingston, NY
关键词
D O I
10.1109/T-ED.1979.19432
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Logic circuits were designed and fabricated in a 1 μm silicon-gate MOSFET technology. First, conventional random logic chip images using the largely one-dimensional “Weinberger” layout are examined. The image is able to provide chips with an average circuit delay of 3 ns at the 8000 circuit level of integration. Second, two forms of PLA and PLA-based macros are discussed. A dynamic PLA, used in a microprocessor cross section and including 105 product terms, which achieves a 56 ns cycle time is described. A static PLA, designed for 21-ns delay and achieving measured delays from 13 to 21 ns, is also described. Extensions, particularly into low-temperature operation, are discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:333 / 346
页数:14
相关论文
共 16 条
  • [1] BLASER EM, 1978, INT SOLID STATE CIRC, P14
  • [2] COOK PP, UNPUBLISHED
  • [3] COOK PW, 1979, INT SOLID STATE CIRC
  • [4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
    CROWDER, BL
    ZIRINSKY, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
  • [5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
    DENNARD, RH
    GAENSSLEN, FH
    YU, HN
    RIDEOUT, VL
    BASSOUS, E
    LEBLANC, AR
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
  • [6] DENNARD RH, 1973, INT ELECTRON DEVICES
  • [7] DENNARD RH, 1978, INT ELECTRON DEVICES
  • [8] EQUIVALENCE OF MEMORY TO RANDOM-LOGIC
    DONATH, WE
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1974, 18 (05) : 401 - 407
  • [9] DONATH WE, UNPUBLISHED
  • [10] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
    GAENSSLEN, FH
    RIDEOUT, VL
    WALKER, EJ
    WALKER, JJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229