GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON

[1] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[2] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 522 - 523

[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[4] HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (03): : 724 - 725

[5] DEXTER, 1956, PHYS REV, V104, P637

[6] DRESSELHAUS, 1955, PHYS REV, V98, P368

[7] GOLDBERG, 1957, PHYS REV, V105, P865

[8] GREEN M, 1957, B AM PHYS SOC 2, V2, P158

[9] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732

[10] KANE EO, 1956, J PHYS CHEM SOLIDS, V1, P83

[1] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[2] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 522 - 523

[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[4] HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (03): : 724 - 725

[5] DEXTER, 1956, PHYS REV, V104, P637

[6] DRESSELHAUS, 1955, PHYS REV, V98, P368

[7] GOLDBERG, 1957, PHYS REV, V105, P865

[8] GREEN M, 1957, B AM PHYS SOC 2, V2, P158

[9] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732

[10] KANE EO, 1956, J PHYS CHEM SOLIDS, V1, P83