GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON

[11] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[12] LAX B, COMMUNICATION

[13] LONG D, 1957, B AM PHYS SOC 2, V2, P57

[14] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701

[15] MORIN FJ, 1954, PHYS REV, V96, P29

[16] THE MAGNETO-RESISTANCE EFFECT IN ORIENTED SINGLE CRYSTALS OF GERMANIUM [J]. PHYSICAL REVIEW, 1951, 83 (04): : 768 - 776

[17] MAGNETO-RESISTANCE EFFECT AND THE BAND STRUCTURE OF SINGLE CRYSTAL SILICON [J]. PHYSICA, 1954, 20 (11): : 975 - 978

[18] SIMULTANEOUS TRANSPORT OF HEAVY AND LIGHT HOLES IN SEMICONDUCTORS WITH A DEGENERATE VALENCE BAND [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1291 - 1294

[19] NOTE ON THE THEORY OF RESISTANCE OF A CUBIC SEMICONDUCTOR IN A MAGNETIC FIELD [J]. PHYSICAL REVIEW, 1950, 79 (02): : 372 - 375

[20] SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P338

[11] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[12] LAX B, COMMUNICATION

[13] LONG D, 1957, B AM PHYS SOC 2, V2, P57

[14] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701

[15] MORIN FJ, 1954, PHYS REV, V96, P29

[16] THE MAGNETO-RESISTANCE EFFECT IN ORIENTED SINGLE CRYSTALS OF GERMANIUM [J]. PHYSICAL REVIEW, 1951, 83 (04): : 768 - 776

[17] MAGNETO-RESISTANCE EFFECT AND THE BAND STRUCTURE OF SINGLE CRYSTAL SILICON [J]. PHYSICA, 1954, 20 (11): : 975 - 978

[18] SIMULTANEOUS TRANSPORT OF HEAVY AND LIGHT HOLES IN SEMICONDUCTORS WITH A DEGENERATE VALENCE BAND [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1291 - 1294

[19] NOTE ON THE THEORY OF RESISTANCE OF A CUBIC SEMICONDUCTOR IN A MAGNETIC FIELD [J]. PHYSICAL REVIEW, 1950, 79 (02): : 372 - 375

[20] SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P338