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CHARGE NEUTRALITY AND THE INTERNAL ELECTRIC-FIELD PRODUCED BY IMPURITY DIFFUSION

被引：20
作者：
SHRIVASTAVA, R
MARSHAK, AH
机构：
来源：
SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 01期
关键词：
D O I：
10.1016/0038-1101(80)90170-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：73 / 74
页数：2
相关论文
共 7 条
[1]   GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM [J].
HU, SM .
PHYSICAL REVIEW, 1969, 180 (03) :773-+
[2]   DIFFUSION IN HEAVILY DOPED SEMICONDUCTORS - LOCAL CHARGE NEUTRALITY AND ONE-BAND APPROXIMATIONS [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :2015-&
[3]   THEORETICAL CALCULATIONS OF FERMI LEVEL AND OF OTHER PARAMETERS IN PHOSPHORUS DOPED SILICON AT DIFFUSION TEMPERATURES [J].
JAIN, RK ;
VANOVERS.RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) :155-165
[4]   NUMERICAL STUDY OF FIELD-AIDED DIFFUSION [J].
PERRITT, RQ ;
MARSHAK, AH .
SOLID-STATE ELECTRONICS, 1974, 17 (03) :257-265
[5]   EFFECT OF INTERNAL ELECTRIC FIELD ON IONIZED IMPURITY DIFFUSION IN SEMICONDUCTORS [J].
SHAW, D ;
WELLS, ALJ .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (08) :999-+
[6]  
WIDIGER DJ, 1974, THESIS LOUISIANA STA
[7]  
1976, TR496973F STANF U ST
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