INTRA-VALENCE-BAND AND INTER-VALENCE-BAND ELECTRONIC RAMAN-SCATTERING IN HEAVILY DOPED P-GAAS

被引：16

作者：

OLEGO, D ^{[1
]}

CARDONA, M ^{[1
]}

ROSSLER, U ^{[1
]}

机构：

[1] UNIV REGENSBURG,FAK PHYS,D-8400 REGENSBURG,FED REP GER

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.22.1905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1905 / 1911

页数：7

共 16 条

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[2]

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[3] ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING [J].

CARDONA, M .

PHYSICAL REVIEW, 1961, 121 (03) :752-&

[4]

Cardona M, 1972, ATOMIC STRUCTURE PRO, P514

[5] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745

[6] INTRABAND RAMAN-SCATTERING BY FREE CARRIERS IN HEAVILY DOPED N-SI [J].

CHANDRASEKHAR, M ;

CARDONA, M ;

KANE, EO .

PHYSICAL REVIEW B, 1977, 16 (08) :3579-3595

[7]

CHANDRASEKHAR M, 1978, PHYSICS SEMICONDUCTO, P961

[8]

GEURTS J, 1978, PHYSICS SEMICONDUCTO, P513

[9]

KLEIN MV, 1975, LIGHT SCATTERING SOL, P205

[10]

MILLS DL, 1971, LIGHT SCATTERING SOL, P107

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