INTRABAND RAMAN-SCATTERING BY FREE CARRIERS IN HEAVILY DOPED N-SI

[1] CHANDRASEKHAR M, 1977, 13TH P INT C PHYS SE, P255

[2] CHANDRASEKHAR M, UNPUBLISHED

[3] RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN GE [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 2917 - 2931

[4] PIEZORESISTANCE OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 115 (02): : 336 - 345

[5] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J]. PHYSICAL REVIEW, 1967, 161 (03): : 756 - &

[6] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[7] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5448 - 5464

[8] ELECTRON-PHONON COUPLING IN HIGHLY DOPED N-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (08) : 1047 - 1049

[9] Klein M.V., 1975, LIGHT SCATTERING SOL

[10] LINDHARD DIELECTRIC FUNCTION IN RELAXATION-TIME APPROXIMATION [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (05): : 2362 - +

[1] CHANDRASEKHAR M, 1977, 13TH P INT C PHYS SE, P255

[2] CHANDRASEKHAR M, UNPUBLISHED

[3] RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN GE [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 2917 - 2931

[4] PIEZORESISTANCE OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 115 (02): : 336 - 345

[5] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J]. PHYSICAL REVIEW, 1967, 161 (03): : 756 - &

[6] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[7] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5448 - 5464

[8] ELECTRON-PHONON COUPLING IN HIGHLY DOPED N-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (08) : 1047 - 1049

[9] Klein M.V., 1975, LIGHT SCATTERING SOL

[10] LINDHARD DIELECTRIC FUNCTION IN RELAXATION-TIME APPROXIMATION [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (05): : 2362 - +