ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON

被引：62

作者：

JAIN, K

LAI, S

KLEIN, MV

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.13.5448

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5448 / 5464

页数：17

相关论文

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