POLARIZABILITIES OF SHALLOW DONORS IN SILICON

被引：55

作者：

BETHIN, J ^{[1
]}

CASTNER, TG ^{[1
]}

LEE, NK ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 14卷 / 12期

关键词：

D O I：

10.1016/0038-1098(74)90657-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1321 / 1324

页数：4

共 10 条

[1]

CASTELLAN GW, 1951, SEMICONDUCTING MATER

[2] EFFECT OF NEUTRAL IMPURITY ON THE MICROWAVE CONDUCTIVITY AND DIELECTRIC CONSTANT OF GERMANIUM AT LOW TEMPERATURES [J].

DALTROY, FA ;

FAN, HY .

PHYSICAL REVIEW, 1956, 103 (06) :1671-1674

[3] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[4] A DIELECTRIC APPROACH TO IMPURITY CONDUCTION [J].

FROOD, DGH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 75 (482) :185-193

[5] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J].

HENSEL, JC ;

HASEGAWA, H ;

NAKAYAMA, M .

PHYSICAL REVIEW, 1965, 138 (1A) :A225-&

[6] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .2. METAL-INSULATOR TRANSITION IN A RANDOM ARRAY OF CENTRES [J].

MOTT, NF ;

DAVIS, EA .

PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1269-&

[7]

POLLACK M, 1969, PHYS REV, V122, P1742

[8] DIELECTRIC ANOMALIES IN SILICON SINGLE CRYSTALS [J].

RAO, KV ;

SMAKULA, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2840-&

[9] Edge correction in the determination of dielectric constant [J].

Scott, AH ;

Curtis, HL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1939, 22 (4/6) :747-775

[10] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

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