TYPES OF TRAPS FOR DEUTERIUM IMPLANTED INTO GRAPHITE

Single-crystalline graphite samples have been implanted with deuterium ions at 3 keV to fluences of 1 x 10(15)-9 x 10(18) D/cm2 at 300 K. The measurements of deuterium containing species by SIMS and of the partial pressure of HD and D2 molecules during Ar-ion sputtering of the implanted and post-irradiation heated samples revealed that at high fluences there are two types of carbon-deuterium trap configurations, whereas at low fluences there is only one type responsible for the trapping of the majority of the D atoms. The depth profiles of these configurations were determined. It was speculated that the formation of these configurations is caused by the bonds between s-electrons of deuterium atoms and sp2 or sp3 hybridized carbon atoms.