INFLUENCE OF TRANSVERSE MODES ON PHOTOCONDUCTIVE DECAY IN FILAMENTS

[1] LIFETIME IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1301 - 1308

[2] BLAKEMORE JS, 1959, B AM PHYS SOC 2, V4, P179

[3] SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW, 1956, 102 (01): : 86 - 91

[4] McKelvey J. P., 1958, IRE T ELECTRON DEV, V5, P260

[5] Morse P., 1953, METHODS THEORETICAL

[6] RIDLEY BK, 1958, J ELECTRON CONTR, V5, P549

[7] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420

[8] SIM AC, 1958, J ELECTRONICS CONTRO, V5, P251

[9] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 190 - 195

[1] LIFETIME IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1301 - 1308

[2] BLAKEMORE JS, 1959, B AM PHYS SOC 2, V4, P179

[3] SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW, 1956, 102 (01): : 86 - 91

[4] McKelvey J. P., 1958, IRE T ELECTRON DEV, V5, P260

[5] Morse P., 1953, METHODS THEORETICAL

[6] RIDLEY BK, 1958, J ELECTRON CONTR, V5, P549

[7] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420

[8] SIM AC, 1958, J ELECTRONICS CONTRO, V5, P251

[9] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 190 - 195