A SINGLE P-I-N JUNCTION AMORPHOUS-SILICON SOLAR-CELL WITH CONVERSION EFFICIENCY OF 12.65-PERCENT

被引：10

作者：

ARAI, Y

ISHII, M

SHINOHARA, H

YAMAZAKI, S

机构：

[1] Semiconductor Energy Laboratory Company Ltd., Atsugi-shi, Kanagawa 243

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 08期

关键词：

D O I：

10.1109/55.119165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A conversion efficiency of 12.65% was obtained at AM-1.5, 100 mW/cm2 for a single p-i-n junction amorphous-Si solar cell of 1.05 cm2, with a glass/SnO2/p-i-n/back-electrode structure. The solar cell had a short-circuit current (J(sc)) of 19.13 mA/cm2, an open-circuit voltage (V(oc)) of 0.885 V, and a fill factor (FF) of 74.7%.

引用

页码：460 / 461

页数：2