EFFECTS OF SURFACE-MORPHOLOGY OF TRANSPARENT ELECTRODE ON THE OPEN-CIRCUIT VOLTAGE IN A-SI-H SOLAR-CELLS

被引：80

作者：

SAKAI, H

YOSHIDA, T

HAMA, T

ICHIKAWA, Y

机构：

[1] Electron Device Laboratory, Fuji Electric Corporate Research and Development Ltd, Yokosuka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1990年 / 29卷 / 04期

关键词：

Asi: H; Open-circuit vo Itage; P-i-n diode; Sem; SnO[!sub]2[!/sub; Solar cell; Teeivi; Tem; Texture transparent electrode;

D O I：

10.1143/JJAP.29.630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The open-circuit voltage of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells depends on the surface morphology of transparent electrodes and the i-layer thickness. We have studied the relationship between the Voc and these parameters experimentally. To investigate the detailed mechanism of the Voc drop, transmission and scanning electron microscopies (TEM and SEM) were used, and it was found by the TEM images that white stripelike defective regions were generated in the i-layer deposited on highly textured transparent electrodes. From the current-voltage characteristics of these solar cells under the dark condition, the relationship between the defects and the electrical properties of the cells has been studied. The results showed that the defect acts as a recombination center of carriers. © 1990 The Japan Society of Applied Physics.

引用

页码：630 / 635

页数：6

共 11 条

[1] EFFICIENCY OF THE A-SI-H SOLAR-CELL AND GRAIN-SIZE OF SNO2 TRANSPARENT CONDUCTIVE FILM [J].

IIDA, H ;

SHIBA, N ;

MISHUKU, T ;

KARASAWA, H ;

ITO, A ;

YAMANAKA, M ;

HAYASHI, Y .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) :157-159

[2] TEXTURE MORPHOLOGY OF SNO2-F FILMS AND CELL REFLECTANCE [J].

MIZUHASHI, M ;

GOTOH, Y ;

ADACHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (11) :2053-2061

[3] PLASMA-DEPOSITED THIN-FILM STEP COVERAGE CALCULATED BY COMPUTER-SIMULATION [J].

ROSS, RC ;

VOSSEN, JL .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :239-240

[4] DOUBLE-STACKED A-SI/A-SI AND A-SIC/A-SI TANDEM SOLAR-CELLS WITH HIGH-EFFICIENCY AND HIGH-RELIABILITY [J].

SAKAI, H ;

YOSHIDA, T ;

FUJIKAKE, S ;

ICHIKAWA, Y .

AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 :477-482

[5]

SAKAI H, 1988, T J I ELECTR ENG D, V108, P123

[6]

SAKAI H, 1984, 5TH P EC PHOT SOL EN, P808

[7]

STONE JL, 1989, 4TH P INT PHOT SCI E, P19

[8]

Tanaka K., 1987, Material Science Reports, V2, P139, DOI 10.1016/S0920-2307(87)80003-8

[9] FILM FORMATION MECHANISMS IN THE PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].

TSAI, CC ;

KNIGHTS, JC ;

CHANG, G ;

WACKER, B .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2998-3001

[10]

Yoshida T., 1988, Eighth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR 11780), P893

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