FILM FORMATION MECHANISMS IN THE PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON

被引：182

作者：

TSAI, CC

KNIGHTS, JC

CHANG, G

WACKER, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2998 / 3001

页数：4

共 18 条

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