NOISE AND DIFFUSION OF HOT HOLES IN SI

被引：17

作者：

JACOBONI, C

GAGLIANI, G

REGGIANI, L

TURCI, O

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90154-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：315 / 318

页数：4

共 14 条

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[2] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J].

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[3] NONPARABOLICITY AND INTRINSIC CARRIER CONCENTRATION IN SI AND GE [J].

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[4] GENERALIZATION OF FICKS LAW FOR NONLOCAL COMPLEX DIFFUSION IN SEMICONDUCTORS [J].

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[5]

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[6] PARALLEL DIFFUSION CONSTANT OF HOT-ELECTRONS IN SILICON [J].

NAG, BR .

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[7] DIFFUSION EQUATION FOR HOT-ELECTRONS [J].

NAG, BR .

PHYSICAL REVIEW B, 1975, 11 (08) :3031-3036

[8] NOISE OF HOT HOLES IN SPACE-CHARGE-LIMITED GERMANIUM DIODES [J].

NICOLET, MA ;

BILGER, HR ;

SHUMKA, A .

SOLID-STATE ELECTRONICS, 1971, 14 (08) :667-&

[9] HOLE DRIFT VELOCITY IN SILICON [J].

OTTAVIANI, G ;

REGGIANI, L ;

CANALI, C ;

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PHYSICAL REVIEW B, 1975, 12 (08) :3318-3329

[10]

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