NONPARABOLICITY AND INTRINSIC CARRIER CONCENTRATION IN SI AND GE

被引：28

作者：

GAGLIANI, G ^{[1
]}

REGGIANI, L ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,MODENA,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1007/BF02725697

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：207 / 216

页数：10

共 33 条

[1]

ABRAMOWITZ M, 1968, HDB MATH FUNCTIONS, P417

[2]

AGGARWAL L, 1967, PHYS REV LETT, V19, P236

[3] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

AUVERGNE, D ;

CAMASSEL, J ;

MATHIEU, H ;

CARDONA, M .

PHYSICAL REVIEW B, 1974, 9 (12) :5168-5177

[4] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[5]

BASLEV I, 1965, PHYS LETT, V19, P6

[6] GALVANOMAGNETIC STUDIES OF DEGENERATE GALLIUM-DOPED GERMANIUM - NONPARABOLIC ENERGY BANDS WITH VARIABLE WARPING [J].

BERNARD, W ;

STRAUB, WD ;

ROTH, H .

PHYSICAL REVIEW, 1963, 132 (01) :33-&

[7] COULOMB SCREENING IN INTRINSIC MEDIUM-GAP SEMICONDUCTORS AND ELECTRICAL CONDUCTIVITY OF SILICON AT ELEVATED TEMPERATURES [J].

BURTON, LC ;

MADJID, AH .

PHYSICAL REVIEW, 1969, 185 (03) :1127-&

[8] SPIN-ORBIT EFFECT IN SI VALENCE BAND [J].

CANALI, C ;

COSTATO, M ;

OTTAVIANI, G ;

REGGIANI, L .

PHYSICAL REVIEW LETTERS, 1973, 31 (08) :536-539

[9]

CARDONA M, 1960, HELV PHYS ACTA, V33, P229

[10]

CONWELL EM, 1967, SOLID STATE PHYSIC S, V9

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