DEEP INTRINSIC AND PHOTOSTRUCTURAL DEFECT LEVELS IN AMORPHOUS SELENIUM FILMS

被引：14

作者：

CHAND, S

BHATHEJA, RC

SHARMA, GD

CHANDRA, S

机构：

[1] National Physical Laboratory

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期

关键词：

D O I：

10.1063/1.348997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermally stimulated discharge current (TSD) behavior of native (dark rested) and irradiated amorphous selenium films (approximately 100-mu-m) has been studied in the temperature range 295-385 K. The TSD spectra of these films shows, in addition to the already reported relaxation at 310 K, a new relaxation peak in the temperature range 370-380 K. The origin of this relaxation is attributed to the trapping of charge carriers i.e., electron and holes at deep intrinsic and irradiation induced photostructural defect levels lying at approximately 1.6 and 1.7 eV, respectively.

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页码：5122 / 5124

页数：3

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