SCATTERING OF ELECTRONS BY DEFORMATION POTENTIAL IN DOPED INSB

被引：14

作者：

DEMCHUK, KM ^{[1
]}

TSIDILKOVSKII, IM ^{[1
]}

机构：

[1] ACAD SCI USSR,INST MET PHYS,SVERDLOVSK,USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 82卷 / 01期

关键词：

D O I：

10.1002/pssb.2220820103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：59 / 67

页数：9

共 19 条

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[15] ELECTRON SCATTERING IN INSB [J].

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[16] DEFORMATION POTENTIAL CONSTANT OF CONDUCTION BAND IN INSB [J].

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[18] ELECTRON-TRANSPORT PHENOMENA IN SMALL-GAP SEMICONDUCTORS [J].

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[19] ELECTRON SCATTERING AND TRANSPORT PHENOMENA IN N-INSB [J].

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